Micro-Epsilon 推出 90° 光路 interferoMETER IMP-NIR-TH3/90/IP68 晶圆测厚传感器
90° beam path boosts stability in wafer thickness measurement
Micro-Epsilon 扩展 interferoMETER 白光干涉仪系列，新增采用 90° 光路的传感器 interferoMETER IMP-NIR-TH3/90/IP68，可在硅与碳化硅半导体晶圆生产中实现稳定的厚度测量。该传感器具备 IP68 防护等级和集成空气吹扫装置，工作距离仅 3mm、光斑直径 15μm，适合安装空间极为有限且颗粒负载高的场合，例如浆料研磨工序，不锈钢外壳可直接装入机床。传感器由 IMS5420 控制器驱动，该系统采用波长范围 1,100nm 的宽带超辐射发光二极管（SLED），一套系统即可测量未掺杂、掺杂与高掺杂硅晶圆。在 24mm 距离下可测 50 至 1050µm 厚度、掺杂度最高 5mΩ cm，z 轴分辨率优于 1nm；对电阻率 0.005Ωcm 的高掺杂晶圆可测 0.05mm 至 0.85mm 厚度。测量速率最高 6kHz，适用于研磨、研磨后及过程中的在线与近线测厚以及质量控制，也可用于玻璃和薄膜测厚。IMS5420 提供厚度测量系统与多峰（MP）版本，后者可测最多五层（如晶圆厚度、气隙、薄膜及 >50µm 涂层），硅厚度 0.05 至 1.05mm，可测气隙厚度达 4mm。系统配有直观的 Web 界面，并提供 EtherCAT、Ethernet、Profinet、EtherNet/IP、RS422 及模拟量等接口。
Posted on 23 Oct 2026. Edited by: Jackie Seddon. Read 1210 times.
Precision sensor supplier Micro-Epsilon has further developed its interferoMETER range of white light interferometers to include a sensor with a 90° beam path that enables stable thickness measurement of silicon and silicon carbide semiconductor wafers.
With a 90° beam path, IP68 protection rating and integrated air purge device, the new robust interferoMETER IMP-NIR-TH3/90/IP68 is specially designed for demanding production environments. The sensor enables precise thickness measurements of semiconductor wafers during production – even when high particle loads occur such as in the slurry grinding process. The sensor has a small working distance of just 3mm, making it ideal for applications with very limited installation space.
The sensor shows its strengths particularly in demanding processes such as slurry grinding. The robust IP68 stainless steel housing allows it to be used directly in the machine, even with high humidity and high particle loads. In grinding and lapping processes, a clean appearance is critical. This is ensured by the integrated air purge device, which keeps the optics permanently free of particles, which enables stable measurements.
A key feature of the sensor is the 90° optical beam path, which enables integration in very tight installation spaces. The working distance (3mm) and very small light point diameter (15μm) create the basis for high precision inline measurements directly in the machine. The IMP-NIR-TH3/90/IP68 sensor is operated using the IMS5420 controller, providing a compact, reliable solution for the measurement of highly doped wafers, where high signal quality is critical.
The interferoMETER IMS5420 system incorporates a broadband superluminescent diode (SLED) with a wavelength range of 1,100nm, allowing thickness measurements of undoped, doped and highly doped silicon wafers using only one measuring system. Thicknesses from 50 to 1050µm can be measured with a doping of up to 5mΩ cm from a distance of 24mm and signal stabilities (z-axis resolution) of less than 1nm can be achieved. Even for highly doped wafers with a specific resistance of 0.005Ωcm, thicknesses from 0.05mm to 0.85mm can be measured.
With a measuring rate of up to 6kHz, the interferoMETER IMS5420 is suitable for in-line and at-line thickness measurements, for example, after and during grinding and lapping, as well as during quality control. Other applications for the measurement system include thickness measurement of glass and film.
The interferoMETER IMS5420 is available either as a thickness measuring system or as a multi-peak (MP) version for thickness measurement of up to five layers (e.g. wafer thickness, air gap, film and coatings >50µm) with silicon thicknesses from 0.05 to 1.05mm. The measurable thickness of air gaps is up to 4mm.
For easy set up and configuration, a modern, intuitive web interface is provided. In addition, various interfaces (EtherCAT, Ethernet, Profinet, EtherNet/IP, RS422, analogue) offer numerous integration options.
来源：Machinery Market · 英国制造业新闻 · machinery-market.co.uk